Kioxia Starts 10th-Generation 3D NAND Production for AI Storage
Kioxia and SanDisk jointly develop 3D NAND technology, adding memory layers to increase capacity, improve performance and lower costs per bit. The shift is gaining importance as generative AI drives demand for high-speed data-center storage, while on-device AI requires faster and more power-efficient flash memory. A successful transition to the 10th-generation process will shape both companies’ product competitiveness and profitability in the expanding AI storage market.
Kioxia has begun mass production of its 10th-generation 3D NAND at its Kitakami plant in Japan. The technology is intended for enterprise SSDs supporting PCIe 6.0 and mobile storage products based on UFS 5.0, targeting data centers and on-device AI applications. However, higher costs incurred while improving yields on the new process were a major reason the latest forecasts from Kioxia and SanDisk fell short of market expectations.
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The history behind this eventJapan’s Kioxia Eyes 2026 Mass Production of 10th-Generation NAND for AI Servers
Kioxia is a major Japanese producer of NAND flash memory and has long competed with Samsung Electronics and SK hynix on layer counts and storage density. Surging data volumes from AI training and inference have made high-capacity, low-power NAND a key component in expanded storage systems for AI servers and data centers.
Kioxia plans to mass-produce its 10th-generation BiCS NAND, featuring 332 stacked layers, in fiscal 2026, which runs from April 2026 through March 2027. The company hopes to narrow the technology gap while Samsung Electronics and SK hynix delay their transitions. Reports have not yet disclosed the required investment or the precise month when mass production will begin.
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