Micron Advances HBM4 Expansion, Taps TSMC to Produce HBM4E Base Dies
High-bandwidth memory, or HBM, is a key component for improving data-transfer efficiency in AI accelerators. As the computing demands of large models rise, HBM4 and subsequent products have become a major competitive focus for memory suppliers. Micron’s expansion of advanced packaging and memory capacity will directly affect AI chip supply and the industry’s competitive landscape.
Micron said its HBM4 capacity expansion remains on schedule, with production ramp-up and yield improvements both progressing better than for previous-generation products. The company expects to begin mass-producing HBM4E in 2027 and, for the first time, will have TSMC manufacture the base dies using its process technology. The companies have not disclosed production capacity, process nodes or investment amounts for the partnership.
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The history behind this eventMicron to Double HBM Capacity for Nvidia’s Vera Rubin Chips
High-bandwidth memory is a critical component in artificial-intelligence accelerators, allowing processors to move large volumes of data at high speed. Demand has surged alongside spending on generative AI infrastructure, turning HBM into one of the memory industry’s fastest-growing and most competitive markets. Micron Technology is seeking to narrow the market-share gap with South Korean leaders SK Hynix and Samsung Electronics while strengthening its position in Nvidia’s supply chain.
Micron plans to double monthly HBM production capacity to 100,000 wafers from about 50,000 by the end of 2026, according to the report. The US chipmaker also aims to raise the share of 12-layer HBM4 products to 50% of output, with production geared toward Nvidia’s latest Vera Rubin AI accelerators. The expansion underscores resilient demand for advanced AI memory, while putting greater emphasis on Micron’s ability to improve yields and deliver stable volumes on schedule.
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