Samsung's HBM4E Yield Tops 70% as It Chases SK hynix

High-bandwidth memory is a critical component in artificial-intelligence accelerators, moving data rapidly between processors and memory while limiting power consumption. Samsung Electronics is seeking to leverage its rare combination of memory manufacturing and foundry operations to coordinate memory dies, custom logic base dies and advanced packaging. That vertical integration could help it respond to Nvidia’s increasingly tailored chip requirements and challenge incumbent suppliers for a larger share of the AI-memory market.

Samsung is developing a seventh-generation HBM4E product with an eight-layer stack for Nvidia’s NVHBM initiative, targeting higher transfer speeds and greater customization. Successful qualification could position the South Korean company as a key supplier for Nvidia’s next-generation Rubin Ultra AI architecture. The report did not disclose a sampling date, mass-production timetable, contract value or expected supply volume, leaving the commercial scale and timing of Samsung’s prospective role uncertain.