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Samsung Develops HBM4E to Target Nvidia’s NVHBM Supply Chain

1 reports · First detected 2026-08-29 · Last active 2026-08-29

High-bandwidth memory is a critical component in artificial-intelligence accelerators, moving data rapidly between processors and memory while limiting power consumption. Samsung Electronics is seeking to leverage its rare combination of memory manufacturing and foundry operations to coordinate memory dies, custom logic base dies and advanced packaging. That vertical integration could help it respond to Nvidia’s increasingly tailored chip requirements and challenge incumbent suppliers for a larger share of the AI-memory market.

Samsung is developing a seventh-generation HBM4E product with an eight-layer stack for Nvidia’s NVHBM initiative, targeting higher transfer speeds and greater customization. Successful qualification could position the South Korean company as a key supplier for Nvidia’s next-generation Rubin Ultra AI architecture. The report did not disclose a sampling date, mass-production timetable, contract value or expected supply volume, leaving the commercial scale and timing of Samsung’s prospective role uncertain.

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The Backstory

The history behind this event
Samsung's HBM4E Yield Tops 70% as It Chases SK hynix2026-07-01 · 1 reports · similarity 0.82

High-bandwidth memory (HBM) is a key component for boosting the computing performance of NVIDIA AI accelerators, and SK hynix currently leads the market. Samsung Electronics is seeking to narrow the gap with seventh-generation HBM4E. Its yields and reliability will directly affect the pace of mass production and its ability to secure NVIDIA orders.

As of July 20, 2026, Samsung Electronics said the yield in HBM4E reliability testing had exceeded 70%, gradually approaching the threshold for mature mass production. Samsung CTO Song Jae-hyuk also said the company aims to overtake its rivals with next-generation DRAM. Samsung has yet to disclose a shipment timetable, customer-validation results or order values.

Samsung Lifts HBM4 Capacity to Half of Total Output to Support Nvidia’s Next-Generation AI Chips2026-03-18 · 1 reports · similarity 0.85

High-bandwidth memory, or HBM, is a critical component that enables Nvidia’s AI accelerators to process vast amounts of data quickly, making supply capacity a key factor in new chip shipments. Samsung Electronics is competing with SK hynix and Micron Technology to strengthen its position in the AI hardware supply chain by increasing the share of HBM4 and upgrading its manufacturing processes.

Samsung Electronics recently announced plans to expand capacity in line with Nvidia’s next-generation AI chip launch cycle, raising HBM4 to more than half of its total HBM output. Samsung also unveiled its future technology roadmap for the first time, including plans to fully adopt an advanced 2-nanometer process for the HBM5 generation. It has yet to disclose the exact investment amount, mass-production date or scale of the additional capacity.

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