SK Hynix Advances 16-Layer HBM Commercialization and Hybrid Bonding Technology
High-bandwidth memory, or HBM, vertically stacks multiple memory dies to deliver greater bandwidth for AI accelerators and has become a critical component of generative AI infrastructure. SK Hynix is now focusing on hybrid bonding, which shortens the connections between chips to increase transfer speeds and improve heat dissipation in stacked designs. The technology is central to its competition with Samsung Electronics and Micron.
SK Hynix said it has completed validation of a 12-layer HBM stack and is expanding its hybrid bonding capabilities, with the next phase targeting commercialization of 16-layer HBM in 2027. Compared with current 12-layer designs, 16-layer products are expected to increase capacity per chip and improve data-processing performance. However, the reports did not disclose a formal launch date, a mass-production timetable or the amount of investment.
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The history behind this eventSK hynix Supplies 12-Layer HBM4E Samples to Accelerate AI Chip Innovation
High-bandwidth memory, or HBM, is a critical component that gives AI accelerators rapid access to vast amounts of data, directly affecting model training and inference efficiency. SK hynix is targeting next-generation AI data centers and large-scale computing systems with HBM4E, while using MR-MUF packaging to improve cooling, performance and stability in multilayer stacks.
SK hynix recently said it had supplied 12-layer HBM4E samples to major customers but did not disclose their names, shipment dates or transaction values. The new product delivers data-transfer speeds of 16 Gbps per pin and more than 20% greater energy efficiency than its predecessor. The company hopes customer validation will accelerate adoption in next-generation AI chips.
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